BUK7610-55AL_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
10³
Limit R_DSon = V_DS / I_D
I_D
(A)
10²
(1)
DC
10
003aaa737
t_p = 10 μ s
100 μs
1 ms
10 ms
100 ms
1
1
10
V_DS (V)
10²
T_mb = 25 °C; I_DM is single pulse
(1) Capped at 75 A due to package.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Min
R_th(j-a)
thermal resistance mounted on a printed-circuit
-
from junction to
board; minimum footprint; vertical
ambient
in still air
R_th(j-mb)
thermal resistance see Figure 5
-
from junction to
mounting base
Typ
Max
Unit
50
-
K/W
0.25
0.5
K/W
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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