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BUK752R3-40E_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK752R3-40E
N-channel TrenchMOS standard level FET
103
IAL
(A)
102
10
1
003aah181
(1)
(2)
(3)
10-1
10-3
10-2
10-1
1 tAL(ms) 10
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
104
ID
(A)
103
102
Limit RDSon= VDS/ ID
003aah182
tp =10 µ s
100 µ s
10
DC
1 ms
10 ms
1
100 ms
10-1
10-1
1
10
VDS (V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
vertical in still air
BUK752R3-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 September 2012
Min Typ Max Unit
-
-
0.51 K/W
-
60
-
K/W
© NXP B.V. 2012. All rights reserved
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