BUK7520-55 Datasheet, PDF (4/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7520-55
100
16
ID/A
10
80
9
VGS/V =
8.5
8.0
7.5
60
7.0
6.5
40
6.0
20
5.5
5.0
4.5
0
0
2
4 _VDS/V 6
8
10 ^4.0
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
40 ^RDS(ON)/mOhm
VGS/V =
35
6
30
25
6.5
7
20
15
8
9
10
10
0 10 20 30 40 50 60 70 80 90
ID/A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
100
ID/A
80
60
40
20
Tj/C = 175
25
0
0
2
4
6
8
10
12
VGS/V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
30
gfs/S
25
20
15
10
5
0
0
20
40
60
80
100
ID/A
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
2.5 ^a
BUK959-60 _{Rds(on) normlised to 25degC}
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 10 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
April 1998
4
Rev 1.100