BUK7514-55 Datasheet, PDF (4/8 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7514-55
100
16
8
ID/A ₁₀
7.5
80
VGS/V = 7
6.5
60
6
40
5.5
20
5
4.5
0
4
0
2
4 _VDS/V 6
8
10
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON)/mOhm
30
VGS/V =
6
25
20
15
10
6.5
7
8
9
10
5
0 _{10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100}
ID/A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
100
ID/A
80
60
40
20
Tj/C = 175
25
0
0
1
2
3
4
5
6
7
8
9
VGS/V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
40
gfs/S
35
30
25
20
15
10
5
0
0
20
40 _ID/A 60
80
100
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
2.5 ^a
BUK959-60 _{Rds(on) normlised to 25degC}
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 5 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
April 1998
4
Rev 1.000