BUK662R5-30C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
200
I_D
(A)
160
120
80
40
0
0
003aae559
(1)
50
100
150
200
T_mb (°C)
BUK662R5-30C
N-channel TrenchMOS intermediate level FET
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS / I_D
10
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae530
t_p =10 μ s
100 μ s
DC
1 ms
10 ms
100 ms
10^-1
10^-1
1
10
10²
V _DS (V)
T_mb = 25°C; I_DM is a single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK662R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
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