BUK6210-55C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6210-55C
N-channel TrenchMOS intermediate level FET
80
I_D
(A)
60
003aae744
40
20
0
0
50
100
150
200
T_mb (°C)
120
P_der
(%)
80
03na19
40
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
10⁴
I_D
(A)
10³
10²
10
1
10^-1
10^-1
Limit R_DSon = V_DS/ I_D
1
003aae745
DC
10
t_p = 10 μs
100 μ s
V _DS(V)
1 ms
10 ms
100 ms
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6210-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
4 of 14