BUK474-60H Datasheet, PDF (4/8 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK474-60H
ID / A
80
20 _{15 10}
70
BUK474-60H
VGS / V = 9
60
8
50
40
7
30
20
6
10
5
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
0.2 ^{RDS(ON) / Ohm}
5
6
7
0.15
0.1
BUK474-60H
8
VGS / V =
9
0.05
10
20
0
0 10 20 30 40 50 60 70 80
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
80 ^{ID / A}
Tj / C =
70
-40
25
150
60
BUK474-60H
50
40
30
20
10
0
0
2
4
6
8
10
12
VGS / V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 15 V; parameter T_j
gfs / S
20
BUK474-60H
15
10
5
Tj / C =
-40
25
150
0
0
10 20 30 40 50 60 70 80
ID / A
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 15 V
a
1.5
Normalised RDS(ON) = f(Tj)
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 20 A; V_GS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
February 1996
4
Rev 1.000