BUK474-200A Datasheet, PDF (4/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of BUK454-200A/B

Philips Semiconductors
PowerMOS transistor
Product specification
BUK474-200A/B
ID / A
20
VGS / V =
20
BUK444-200A
10
8
15
7
10
6
5
5
0
4
0 2 4 6 8 10 12 14 16 18 20
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
1.5
4.5 5 5.5 6
1.0
BUK454-200A
6.5 7 VGS / V =
7.5
8
10
0.5
20
0
0
Fig.6.
2 4 6 8 10 12 14 16 18 20
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
ID / A
20
15
Tj / C =
BUK454-200A
25
150
10
5
0
0
2
4
6
8
10
VGS / V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
gfs / S
6
BUK454-200A
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
ID / A
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
a
2.4
Normalised RDS(ON) = f(Tj)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 3.5 A; V_GS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
April 1998
4
Rev 1.100