BUK445-200A Datasheet, PDF (4/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK445-200A/B
ID / A
30
VGS / V = ²⁰
10
8
7
20
10
BUK455-200A
6
5
4
0
0 2 4 6 8 10 12 14 16 18 20
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
1.0
4
4.5
5
0.8
0.6
0.4
0.2
BUK455-200A
5.5
6
8
10
VGS / V =
20
0
0
Fig.6.
4
8 12 16 20 24 28
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
ID / A
28
BUK455-200A
24
20
16
12
8
Tj / C = 150
25
4
0
0
2
4
6
8
10
VGS / V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V; parameter T_j
15 ^{gfs / S}
BUK455-200A
10
5
0
0
4
8
12 16 20 24 28
ID / A
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D); conditions: V_DS = 25 V
a
2.4
Normalised RDS(ON) = f(Tj)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 7 A; V_GS = 10 V
VGS(TO) / V
4
3
2
max.
typ.
min.
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
April 1993
4
Rev 1.100