BUJ106AX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
120 ^%
110
Normalised Derating
with heatsink compound
100
90
80
70
60
P _tot
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.7. Normalised power dissipation.
PD% = 100⋅PD/PD _25˚C = f (T_hs)
HFE
50
30
20
15
10
VCE = 5V
VCE = 1V
5
2
0.01
Fig.8.
0.05 0.1
0.3
IC/A
1
2
5
8 12
Typical DC current gain. h_FE = f(I_C)
parameter V_CE
VCEsat/V
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.01
0.1
IB/A
1A
1
3A
2A
4A
10
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V_CEsat = f(IB); T_j=25˚C.
Product specification
BUJ106AX
VBEsat/V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.1
1
10
IC/A
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V_BEsat = f(IC); at IC/IB =4.
VCEsat/V
0.3
0.25
0.2
0.15
0.1
0.05
0
0.1
1
10
IC/A
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V_CEsat = f(IC); at IC/IB =4.
Zth / (K/W)
10
BU1706AX
0.5
1 _0.2
0.1
0.05
0.1 _0.02
0.01
D=0
P_D
tp
tp
D= _T
T
t
0.001
1u 10u 100u 1m 10m 100m 1 10 100
t/s
Fig.12. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
March 1999
4
Rev 2.000