BU508AF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
VCESAT / V
1
0.9
BU508AD
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
IC / A ¹⁰
Fig.7. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBESAT / V
1.4
BU508AD
1.2
1
IC = 4.5A
IC = 3A
0.8
IC = 6A
0.6
0
1
2
3 _{IB / A} 4
Fig.8. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT/V
10
BU508AD
Product specification
BU508AF
Zth K/W
10
bu508ax
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0
P_D
tp
D
=
tp
T
0.001
1.0E-07
1.0E-05
1E-03
T
t
1.0E-01
1.0E+1
t/s
Fig.10. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_hs)
1
IC = 6A
IC = 4.5A
0.1
0.1
1 _IB/A
IC = 3A
10
Fig.9. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
July 1998
4
Rev 1.200