BU4525AF Datasheet, PDF (4/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4525AF
hFE
100
VCE = 5V
10
Ths = 25 C
ThBsU=4582555CV
1
0.01
0.1
1
10
100
IC / A
Fig.7. High and low DC current gain.
VBEsat / V
1.2
1.1
1
IC = 9 A
BU4525AF/X/W
Ths = 25 C
Ths = 85 C
0.9
0.8
IC = 7 A
0.7
0.6
0
1
2
3
IB / A 4
Fig.8. Typical base-emitter saturation voltage.
ts/tf / us
10
8
6
ICsat = 9 A
Ths = 85 C
Freq = 16 kHz
ts
4
2
tf
0
0
1
2
3
IB / A 4
Fig.9. Typical collector storage and fall time.
I_C =9 A; T_j = 85˚C; f = 16kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
Zth K/W
10
BU4525AF
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D=
tp
T
0.001
0
1.0E-07
1.0E-05
1.0E-03
t/s
T
t
1.0E-01
1.0E+01
Fig.11. Transient thermal impedance.
10 ^{Ic(sat) (A)}
8
6
4
2
0
0
20
40
60
80
100
Frequency (kHz)
Fig.12. I_Csat during normal running vs. frequency of
operation for optimum performance
October 1998
4
Rev 1.100