BU4522AX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4522AX
hFE
100
VCE = 1 V
10
BU4522AF/X
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10 _{IC / A} 100
Fig.7. High and low DC current gain.
100
VCE = 5 V
BU4522AF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
IC / A1
10
100
Fig.8. High and low DC current gain.
VCEsat (V)
10
Ths = 25 C
Ths = 85 C
1
0.1
BU4522AF/X
IC/IB = 5
0.01
0.1
1
10
IC / A ¹⁰⁰
Fig.9. Typical collector-emitter saturation voltage.
VBEsat \ V
1.3
1.2
Ths = 25 C
Ths = 85 C
1.1
IC = 7 A
1
0.9
0.8
IC = 6 A
0.7
0.6
0
1
2
3
IB / A ⁴
Fig.10. Typical base-emitter saturation voltage.
ts/tf/ us
5
4
BU4522AF/X 16kHz
ICsat = 7 A
Ths = 85 C
Freq = 16 kHz
3
2
1
0
0
Fig.11.
0.5
1
1.5 _{IBend / A} 2
Typical collector storage and fall time.
I_C =7 A; T_j = 85˚C; f = 16kHz
ts/tf/ us
5
4
BU4522AF/X 64kHz
ICsat = 6 A
Ths = 85 C
Freq = 64 kHz
3
2
1
0
0
0.5
1
1.5 _{IB / A} 2
Fig.12. Typical collector storage and fall time.
I_C = 6 A; T_j = 85˚C; f = 64 kHz
December 1997
4
Rev 1.000