BU4515AF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4515AF
hFE
100
5V
10
Ths = 85C
Ths = 85C
1
0.01
0.1
1
IC / A ¹⁰
Fig.7. High and low DC current gain.
VCEsat / V
10
1
IC/IB = 5
0.1
Ths = 25C
Ths = 85C
0.01
0.1
1
IC / A 10
Fig.8. Typical collector-emitter saturation voltage.
VBEsat/V
1.3
1.2
1.1
Ths = 25C
Ths = 85C
1
0.9
0.8
0.7
0.6
0
1
2
3
IB/A 4
Fig.9. Typical base-emitter saturation voltage.
10 ^ts/tf/us
8
ICsat = 6A
Ths 85 C
Freq = 16kHz
6
4
2
0
0.5
1
1.5
2 IB / A 2.5
Fig.10. Typical collector storage and fall time.
I_C =6 A; T_j = 85˚C; f = 16kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
Zth / (K/W)
10
D = 0.5
1
0.2
0.1
0.1 ^0.05
0.02
P_{D tp D = tp/T}
0.01
Single pulse
0.001
1E-06
1E-05
T
t
1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
pulse width, tp (s)
Fig.12. Transient thermal impedance.
June 1999
4
Rev 1.000