BU4507DZ Datasheet, PDF (4/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
10
Ths = 25 C
Ths = 85 C
1
0.1
BU4507DF/X/Z
IC/IB = 5
0.01
0.1
1
10
100
Fig.7. Typical collector-emitter saturation voltage.
VBESAT \ V
1.2
1.1
BU4507DF/X/Z
Ths = 25 C
Ths = 85 C
1
0.9
IC = 4 A
0.8
0.7
0.6
0
1
2
3
IB / A ⁴
Fig.8. Typical base-emitter saturation voltage.
ts/tf/ us
10
8
BU4507D ts/tf
ICsat = 4 A
Ths = 85 C
Freq = 16 kHz
6
4
2
0
0
Fig.9.
0.5
1
1.5
2
2.5
3
IB / A
Typical collector storage and fall time.
I_C =4 A; T_j = 85˚C; f = 16kHz
Product specification
BU4507DZ
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C}
Zth K/W
10
0.5
1
0.2
0.1
0.05
0.1
0.02
BU4507AZ
0.01
P_D
tp
D
=
tp
T
0
0.001
1.0E-07
1.0E-05
1.0E-3
t/s
T
t
1.0E-01
1.0E+01
Fig.11. Transient thermal impedance.
January 1999
4
Rev 1.000