BU2727AX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2727AX
hFE
100
VCE = 1 V
10
BU2727A/AF
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10
100
IC / A
Fig.7. DC current gain. h_FE = f (I_C)
Parameter T_hs
(Low and high gain)
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T_hs)
VCEsat / V
10
Ths = 85 C
Ths = 25 C
1
IC/IB = 12
0.1
BU2727A/AF
IC/IB = 5
0.01
0.1
1
10
100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
Zth / (K/W)
10
BU2525AF
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.11. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
VBEsat / V
1
IC = 6 A
0.9
BU2727A/AF
0.8
4A
0.7
Ths = 85 C
Ths = 25 C
0.6
0
Fig.9.
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.12. Test Circuit RBSOA.
V_CC = 150 V; -V_BB = 1 - 4 V;
L_C = 1 mH; V_CL = 1500 V; L_B = 0.5 - 2 µH;
C_FB = 1 - 3 nF; I_B(end) = 0.8 - 4 A
September 1997
4
Rev 1.200