BU2725AX Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2725AX
hFE
100
VCE = 1 V
10
BU2727A/AF
Ths = 25 C
Ths = 85 C
1
0.01
0.1
1
10
100
IC / A
Fig.7. DC current gain. h_FE = f (I_C)
Parameter T_hs
(Low and high gain)
ts/tf/ us
10
BU2527AFX,DFX
9
8
7
6
5
4
3
2
1
0
0
1
2
3
IB / A 4
Fig.10. Limit storage and fall time.
t_s = f (I_B); tf = f (I_B); T_hs = 85˚C; f = 16 kHz
VCEsat / V
10
Ths = 85 C
Ths = 25 C
1
IC/IB = 12
0.1
BU2727A/AF
IC/IB = 5
0.01
0.1
1
10
100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T_hs)
VBEsat / V
1
IC = 6 A
0.9
BU2727A/AF
0.8
4A
0.7
Ths = 85 C
Ths = 25 C
0.6
0
Fig.9.
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
September 1997
4
Zth / (K/W)
10
BU2525AF
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.12. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
Rev 1.400