BU2522AF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522AF
h _FE
100
Tj = 85 C
Tj = 25 C
Tj = -40 C
10
BU2522A
1
0.01
Fig.7.
0.1
1
10
100
IC / A
Typical DC current gain. h_FE = f (I_C)
V_CE = 5 V
VBESAT / V
1.2
1.1
Tj = 85 C
Tj = 25 C
1
BU2522A
0.9
0.8
0.7
IC/IB =
3
0.6
5
0.5
0.4
0.1
1
10
IC / A
Fig.8. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
VCESAT / V
10
Tj = 85 C
Tj = 25 C
1
IC/IB = 5
0.1
BU2522A
3
0.01
0.1
1
10
100
IC / A
Fig.9. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBESAT / V
1.2
Tj = 85 C
1.1
Tj = 25 C
BU2522A
1
0.9
0.8
IC =
7A
0.7
6A
5A
0.6
0
Fig.10.
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
PTOT / W
100
BU2522AF/DF/AX/DX
Ths = 25 C
Ths = 85 C
10
1
0
0.5
1
1.5
2
IB / A
Fig.11. Typical turn-off losses. T_j = 85˚C
Poff = f (I_B); parameter I_C = 6 A; f = 64 kHz
ts, tf / us
4
BU2522AF
3.5
3
2.5
2
IC =
1.5
6A
1
5A
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IB / A
Fig.12. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C = 6A; T_j = 85˚C;
f = 64 kHz
September 1997
4
Rev 1.400