BU2520DW Datasheet, PDF (4/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520DW
Eoff / uJ
1000
IC = 6 A
5A
100
10
0.1
1
10
IB / A
Fig.9. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; parameter frequency
ts, tf / us
12
11
ts
10
9
8
7
6
5
IC =
4
6A
3
2
5A
1
tf
0
0.1
1
10
IB / A
Fig.10. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 16 kHz
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_mb)
10 ^{Zth / (K/W)}
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P_D
tp
D
=
tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.12. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
IC / A
100
ICM
ICDC
10
= 0.01
BU2520A
tp =
30 us
100 us
Ptot
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.13. Forward bias safe operating area. T_mb = 25 ˚C
I_CDC & I_CM = f(V_CE); I_CM single pulse; parameter t_p
Second-breakdown limits independant of temperature.
September 1997
4
Rev 1.100