BU2520DF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520DF
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1.0
0.9
IC=
0.8
8A
0.7
0.6
0
Fig.7.
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT / V
10
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
Eoff / uJ
1000
IC = 6 A
5A
100
10
0.1
1
10
IB / A
Fig.9. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; parameter frequency
ts, tf / us
12
11
ts
10
9
8
7
6
5
IC =
4
6A
3
2
5A
1
tf
0
0.1
1
10
IB / A
Fig.10. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 16 kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_hs)
10 ^{Zth / (K/W)}
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
P_D
tp
D = ^tp
T
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
t
1E+00
Fig.12. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
September 1997
4
Rev 1.400