BU2520A Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2520A
VCESAT / V
1
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
BU2520A
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
100
IC / A
Fig.9. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU2520A
1
0.9
0.8
0.7
0.6
0
Fig.10.
IC=
8A
6A
5A
4A
1
2
3
4
IB / A
Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT / V
10
BU2520A
Tj = 25 C
Tj = 125 C
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
10
IB / A
Fig.11. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
1000 ^{Eoff / uJ}
IC = 6 A
100
5A
BU2520A
32 kHz
16 kHz
10
0.1
1
10
IB / A
Fig.12. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; parameter frequency
12 ^{ts, tf / us}
BU2520A
11
16 kHz
ts
10
9
8
7
6
5
IC =
4
6A
3
2
5A
1
tf
0
0.1
1
10
IB / A
Fig.13. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 16 kHz
ts, tf / us
12
BU2520A
11
32 kHz
10
9
8
ts
7
6
5
IC =
4
3
6A
2
5A
1
tf
0
0.1
1
10
IB / A
Fig.14. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 32 kHz
November 1995
4
Rev 1.200