BU2508DF Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2508DF
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
BU2508DF
1
0.9
IC=
6A
0.8
4.5A
3A
0.7
2A
0.6
0
1
2
3
4
IB / A
Fig.7. Typical base-emitter saturation voltage.
V_BEsat = f (I_B); parameter I_C
VCESAT / V
10
6A
4.5A
1
BU2508DF
Tj = 25 C
Tj = 125 C
3A
IC=2A
0.1
0.1
1
10
IB / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_B); parameter I_C
1000 ^{Eoff / uJ}
IC = 4.5A
3.5A
100
BU2508DF
10
0.1
1
10
IB / A
Fig.9. Typical turn-off losses. T_j = 85˚C
Eoff = f (I_B); parameter I_C; f = 16 kHz
Zth K/W
10
BU2508AX
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
P
D
tp
D = ^tp
T
0.001
0
1.0E-06
1E-04
tp / sec
T
1E-02
t
1E+00
Fig.10. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
12 ^{ts, tf / us}
BU2508DF
11
10
ts
9
8
7
6
5
IC =
4
3
4.5A
3.5A
2
1
tf
0
0.1
1
10
IB / A
Fig.11. Typical collector storage and fall time.
ts = f (I_B); tf = f (I_B); parameter I_C; T_j = 85˚C; f = 16 kHz
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.12. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25˚C} = f (T_hs)
July 1998
4
Rev 1.600