BTA212BB Datasheet, PDF (4/6 Pages) NXP Semiconductors – Three quadrant triacs high commutation

Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA212B series B
IGT(Tj)
IGT(25 C)
3
2.5
2
BTA212
T2+ G+
T2+ G-
T2- G-
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.
IL(Tj)
IL(25 C)
3
TRIAC
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0
50
100
150
Tj / C
Normalised latching current I_L(T_j)/ I_L(25˚C),
versus junction temperature T_j.
IH(Tj)
3 ^IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),
versus junction temperature T_j.
40 ^{IT / A}
Tj = 125 C
Tj = 25 C
30 _{Vo = 1.175 V}
Rs = 0.0316 Ohms
20
BT138
typ
max
10
0
0
0.5
1
1.5
2
2.5
3
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 ^{Zth j-mb (K/W)}
BT138
1
unidirectional
bidirectional
0.1
0.01
P
D
tp
t
0.001
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Z_{th j-mb}, versus
pulse width t_p.
dIcom/dt (A/ms)
1000
BTA212
100
10
1
20
40
60
80
100
120
140
Tj / C
Fig.12. Typical, critical rate of change of commutating
current dI_com/dt versus junction temperature.
September 1997
4
Rev 1.200