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| BTA208X Datasheet, PDF (4/8 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation | |||
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Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Objective speciï¬cation
BTA208X series D, E and F
DYNAMIC CHARACTERISTICS
Tj = 25 ËC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA208X- ...D ...E ...F
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
30 60 70
Tj = 110 ËC; exponential
waveform; gate open
circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 110 ËC; 1.8 3.5 4.5
commutating current
IT(RMS) = 8 A;
dVcom/dt = 20v/µs; gate
open circuit
- V/µs
- A/ms
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 110 ËC; 3.5 4.5 5.5
commutating current
IT(RMS) = 8 A;
dVcom/dt = 0.1v/µs; gate
open circuit
- A/ms
tgt
Gate controlled turn-on ITM = 12 A; VD = VDRM(max); -
-
-
2
-
µs
time
IG = 0.1 A; dIG/dt = 5 A/µs
October 1999
4
Rev 1.200
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