BTA140 Datasheet, PDF (4/6 Pages) NXP Semiconductors – Triacs

Philips Semiconductors
Triacs
Product specification
BTA140 series
IGT(Tj)
IGT(25 C)
5
4
3
BTA140
T2+ G+
T2+ G-
T2- G-
T2- G+
2
1
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.
IL(Tj)
IL(25 C)
3
TRIAC
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0
50
100
150
Tj / C
Normalised latching current I_L(T_j)/ I_L(25˚C),
versus junction temperature T_j.
IH(Tj)
3 ^IH(25C)
TRIAC
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),
versus junction temperature T_j.
IT / A
80
Tj = 125 C
70 ^{Tj = 25 C}
60 _{Vo = 1.073 V}
Rs = 0.015 ohms
50
BTA140
typ
max
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
VT / V
Fig.10. Typical and maximum on-state characteristic.
10 ^{Zth j-mb (K/W)}
BTA140
1
unidirectional
bidirectional
0.1
0.01
P
D
tp
t
0.001
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Z_{th j-mb}, versus
pulse width t_p.
1000 ^{dV/dt (V/us)}
off-state dV/dt limit
100
dIcom/dt =
25 A/ms 20 15 12 9.0 7.0
10
1
0
50
100
150
Tj / C
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI_T/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI_T/dt.
September 1997
4
Rev 1.200