BSN20BK_15 Datasheet, PDF (4/16 Pages) NXP Semiconductors – 60 V, N-channel Trench MOSFET

NXP Semiconductors
1
I_D
(A)
10^-1
10^-2
Limit R_DSon = V_DS/I_D
BSN20BK
60 V, N-channel Trench MOSFET
aaa-015759
(1)
(2)
(3)
(4)
(5)
(6)
(7)
10^-3
10^-1
1
10
10²
V_DS (V)
I_DM = single pulse
(1) t_p = 10 µs
(2) t_p = 100 µs
(3) t_p = 1 ms
(4) t_p = 10 ms
(5) DC; T_sp = 25 °C
(6) t_p = 100 ms
(7) DC; T_amb = 25 °C; drain mounting pad 1 cm²
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
R_th(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
t≤5s
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
351 404 K/W
[2]
-
271 311 K/W
[2]
-
210 241 K/W
-
65
75
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm}²_.
BSN20BK
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 16