BSH114 Datasheet, PDF (4/13 Pages) NXP Semiconductors – N-channel enhancement mode field effect transistor

Philips Semiconductors
BSH114
N-channel enhancement mode field effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
R_th(j-sp) thermal resistance from junction to solder point mounted on a metal clad substrate; Figure 4
R_th(j-amb) thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
7.1 Transient thermal impedance
Value Unit
150 K/W
350 K/W
03ac54
103
Zth(j-sp)
(K/W)
102
δ = 0.5
0.2
0.1
10 _0.05
0.02
1
10-5
single pulse
10-4
10-3
10-2
P
δ
=
tp
T
10-1
tp
t
T
1 ^tp ^(s)
10
T_sp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07708
Product specification
Rev. 01 — 09 November 2000
© Philips Electronics N.V. 2000. All rights reserved.
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