BLP10H603_15 Datasheet, PDF (4/11 Pages) NXP Semiconductors – Broadband LDMOS driver transistor

NXP Semiconductors
BLP10H603
Broadband LDMOS driver transistor
Table 7. AC characteristics
T_j = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
C_rs
feedback capacitance V_GS = 0 V; V_DS = 50 V; f = 1 MHz
C_iss
input capacitance
V_GS = 0 V; V_DS = 0 V; f = 1 MHz
C_oss
output capacitance
V_GS = 0 V; V_DS = 50 V; f = 1 MHz
Min Typ
- 0.03
- 3.4
- 1.12
Max Unit
- pF
- pF
- pF
Table 8. RF characteristics
Test signal: pulsed CW; f = 860 MHz; RF performance at V_DS = 50 V; I_Dq = 15 mA; t_p = 50 s;
 = 10 %; T_case = 25 C; unless otherwise specified, in a class-AB production test circuit ^[1].
Symbol Parameter
Conditions
Min
Typ
Max
Unit
G_p
power gain
P_L = 2.5 W
21.4
22.8
25.5
dB
_D
drain efficiency
P_L = 2.5 W
60
62
-
%
[1] The industrial test method is performed on special hardware to accommodate the requirements of
production. The test results in this table are correlated to correspond with a performance in the application.
8. Test information
8.1 Ruggedness in class-AB operation
The BLP10H603 is capable of withstanding a load mismatch corresponding to
VSWR = 35 : 1 through all phases under the following conditions: V_DS = 50 V;
I_Dq = 15 mA; P_L = 2.5 W; f = 860 MHz.
8.2 Test circuit
PP
5
&
&
PP
&
&
/
4
/
5 ^&
/
&
&
&
&
DDD
Fig 2.
Printed-Circuit Board (PCB): Rogers RO4350; _r = 3.48; height = 0.762 mm; thickness copper
plating = 35 m.
See Table 9 for a list of components.
Component layout
BLP10H603
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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