BLF881_1012 Datasheet, PDF (4/18 Pages) NXP Semiconductors – UHF power LDMOS transistor

NXP Semiconductors
BLF881; BLF881S
UHF power LDMOS transistor
Table 7. RF characteristics …continued
T_h = 25 °C unless otherwise specified.
Symbol Parameter
DVB-T (8k OFDM)
V_DS
I_Dq
P_L(AV)
G_p
η_D
IMD_shldr
PAR
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
Conditions
Min Typ Max Unit
-
-
-
20
30
[1] _-
[2] _-
50 -
V
0.5 -
A
33 -
W
21 -
dB
34 -
%
−33 −30 dBc
8.3 -
dB
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
200
C_oss
(pF)
160
001aal074
120
80
40
0
0
20
40
60
80
V_DS (V)
V_GS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values
BLF881_BLF881S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
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