BLF245 Datasheet, PDF (4/12 Pages) NXP Semiconductors – VHF power MOS transistor

Philips Semiconductors
VHF power MOS transistor
Product specification
BLF245
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
∆V_GS
g_fs
R_DS(on)
I_DSX
C_is
C_os
C_rs
F
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched devices
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
noise figure (see Fig.14)
CONDITIONS
V_GS = 0; I_D = 10 mA
V_GS = 0; V_DS = 28 V
±V_GS = 20 V; V_DS = 0
I_D = 10 mA; V_DS = 10 V
I_D = 10 mA; V_DS = 10 V
MIN. TYP. MAX. UNIT
65 −
−
−
−
−
2
−
−
−
−
V
2
mA
1
µA
4.5 V
100 mV
I_D = 1.5 A; V_DS = 10 V
1.2
I_D = 1.5 A; V_GS = 10 V
−
V_GS = 10 V; V_DS = 10 V
−
V_GS = 0; V_DS = 28 V; f = 1 MHz
−
V_GS = 0; V_DS = 28 V; f = 1 MHz
−
V_GS = 0; V_DS = 28 V; f = 1 MHz
−
input and output power matched for: −
I_D = 1 A; V_DS = 28 V; P_L = 30 W;
R1 = 1 kΩ; T_h = 25 °C; f = 175 MHz
1.9 −
S
0.4 0.75 Ω
10 −
A
125 −
pF
75 −
pF
7
−
pF
2
−
dB
6
handb_Too_.Ck,_.halfpage
(mV/K)
4
MGP168
2
0
−2
−4
−6
10
10²
10³
10⁴
ID (mA)
V_DS = 10 V; valid for T_j = 25 to 125 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
12
handbook, halfpage
ID
(A)
8
Tj = 25 °C
125 °C
MGP169
4
0
0
10
VGS (V)
20
V_DS = 10 V.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4