BLF2022-70 Datasheet, PDF (4/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2022-70
15
handbook, halfpage
Gp
(dB)
10
5
Gp
η_D
MGW530
60
η_D
(%)
40
20
handbook, h⁰alfpage
dim
(dBc)
− 20
− 40
− 60
MGW531
d3
d5
d7
0
0
0
20
40
60
80
100
PL (PEP) (W)
V_DS = 28 V; I_DQ = 500 mA; T_h ≤ 25 °C;
f₁ = 2170 MHz; f₂ = 2170.1 MHz.
Fig.2 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
− 80
0
20
40
60
80
100
PL (PEP) (W)
V_DS = 28 V; I_DQ = 500 mA; T_h ≤ 25 °C;
f₁ = 2170 MHz; f₂ = 2170.1 MHz.
Fig.3 Intermodulation distortion as a function of
peak envelope load power; typical values.
15
handbook, halfpage
Gp
(dB)
10
(1) (2)
(3)
5
MGW532
60
η_D
(%)
40
(4)
(5) (6)
20
0
handbook, halfpage
d3
(dBc)
− 20
(1)
− 40
(2)
(3)
− 60
MGW533
0
0
0
20
40
60
80
100
PL (PEP) (W)
V_DS = 28 V; T_h ≤ 25 °C;
f₁ = 2170 MHz; f₂ = 2170.1 MHz.
(1) I_DQ = 600 mA.
(2) I_DQ = 500 mA.
(3) I_DQ = 400 mA.
(4) I_DQ = 400 mA.
(5) I_DQ = 500 mA.
(6) I_DQ = 600 mA.
Fig.4 Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
− 80
0
20
40
60
80
100
PL (PEP) (W)
V_DS = 28 V; T_h ≤ 25 °C;
f₁ = 2170 MHz; f₂ = 2170.1 MHz.
(1) I_DQ = 400 mA. (2) I_DQ = 500 mA.
(3) I_DQ = 600 mA.
Fig.5 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
2003 Feb 24
4