BGD902 Datasheet, PDF (4/10 Pages) NXP Semiconductors – CATV amplifier modules

Philips Semiconductors
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
[3] f_p = 55.25 MHz; V_p = 44 dBmV; f_q = 805.25 MHz; V_q = 44 dBmV; measured at f_p + f_q = 860.5 MHz.
[4] f_p = 55.25 MHz; V_p = 44 dBmV; f_q = 691.25 MHz; V_q = 44 dBmV; measured at f_p + f_q = 746.5 MHz.
[5] f_p = 55.25 MHz; V_p = 44 dBmV; f_q = 493.25 MHz; V_q = 44 dBmV; measured at f_p + f_q = 548.5 MHz.
[6] Measured according to DIN45004B: f_p = 851.25 MHz; V_p = V_o; f_q = 858.25 MHz; V_q = V_o −6 dB; f_r = 860.25 MHz; V_r = V_o −6 dB;
measured at f_p + f_q − f_r = 849.25 MHz.
[7] Measured according to DIN45004B: f_p = 740.25 MHz; V_p = V_o; f_q = 747.25 MHz; V_q = V_o −6 dB; f_r = 749.25 MHz; V_r = V_o −6 dB;
measured at f_p + f_q − f_r = 738.25 MHz.
[8] Measured according to DIN45004B: f_p = 540.25 MHz; V_p = V_o; f_q = 547.25 MHz; V_q = V_o −6 dB; f_r = 549.25 MHz; V_r = V_o −6 dB;
measured at f_p + f_q − f_r = 538.25 MHz.
[9] The module normally operates at V_B = 24 V, but is able to withstand supply transients up to 35 V.
−50
CTB
(dB)
−60
−70
(1)
(2)
(3)
(4)
mda980
52
V_o
(dBmV)
(2)
(3)
48
(4)
(1)
44
−50
X_mod
(dB)
−60
−70
mda981
52
(1)
(2)
(3)
(4)
V_o
(dBmV)
48
(1)
44
−80
40
−80
40
−90
0
36
200
400
600
800 1000
f (MHz)
Z_S = Z_L = 75 Ω; V_B = 24 V; 110 chs; tilt = 9 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(550 MHz to 750 MHz).
(1) V_o.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig 1. Composite triple beat as a function of
frequency under tilted conditions
−90
0
36
200
400
600
800 1000
f (MHz)
Z_S = Z_L = 75 Ω; V_B = 24 V; 110 chs; tilt = 9 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(550 MHz to 750 MHz).
(1) V_o.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig 2. Cross modulation as a function of frequency
under tilted conditions
9397 750 14435
Product data sheet
Rev. 07 — 8 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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