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BFR92AW Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92AW
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
ICBO
collector leakage current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
MIN.
IE = 0; VCB = 10 V
−
IC = 15 mA; VCE = 10 V
40
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
IC = 0; VCE = 10 V; f = 1 MHz
−
IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5
IC = 15 mA; VCE = 10 V;
−
f = 1 GHz; Tamb = 25 °C
IC = 15 mA; VCE = 10 V;
−
f = 2 GHz; Tamb = 25 °C
IC = 5 mA; VCE = 10 V;
−
f = 1 GHz; Γs = Γopt
IC = 5 mA; VCE = 10 V;
−
f = 2 GHz; Γs = Γopt
TYP.
−
90
0.6
0.9
0.35
5
14
8
2
3
MAX.
50
−
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM
=
10 log --(--1-----–------s---1---1----2s---)-2--1-(---1-2----–------s---2--2-----2---)-
dB.
1995 Sep 18
4
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