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BFR505T Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFR505T
CHARACTERISTICS
Tj = 25 °C; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
hFE
Cc
Ce
Cre
fT
GUM
S212
F
PL1
ITO
collector cut-off current
IE = 0; VCB = 6 V
â
DC current gain
IC = 5 mA; VCE = 6 V
60
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
â
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz â
feedback capacitance
IC = 0; VCB = 0.5 V; f = 1 MHz
â
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
â
Tamb = 25 °C
maximum unilateral power gain; IC = 5 mA; VCE = 6 V; Tamb = 25 °C;
note 1
f = 900 MHz
â
f = 2 GHz
â
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz; 13
Tamb = 25 °C
noise ï¬gure
Îs = Îopt; IC = 1.25 mA; VCE = 6 V; â
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 5 mA; VCE = 6 V;
â
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 1.25 mA; VCE = 6 V; â
f = 2 GHz; Tamb = 25 °C
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V; RL = 50 â¦;
â
f = 900 MHz; Tamb = 25 °C
third-order intercept point
note 2
â
â
50
nA
120 250
0.4 â
pF
0.4 â
pF
0.3 â
pF
9
â
GHz
17
â
dB
10
â
dB
14
â
dB
1.2 1.7 dB
1.6 2.1 dB
1.9 â
dB
4
â
dBm
10
â
dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log -(--1-----â------S----1---1---S-2---)2--(-1--1--2--â------S-----2--2----2----) dB
2. IC = 5 mA; VCE = 6 V; RL = 50 â¦; f = 900 MHz; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at
f(2p-q) = 898 MHz and at f(2q-p) = 904 MHz.
2000 Mar 14
4
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