BFQ262 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN video transistors

Philips Semiconductors
NPN video transistors
Product specification
BFQ262; BFQ262A
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)CER
V_(BR)EBO
I_CES
I_CBO
h_FE
f_T
C_cb
C_c
collector-base breakdown voltage I_C = 0.1 mA; I_E = 0
BFQ262
BFQ262A
collector-emitter breakdown voltage I_C = 10 mA; I_B = 0
BFQ262
BFQ262A
collector-emitter breakdown voltage I_C = 10 mA; R_BE = 100 Ω
BFQ262
BFQ262A
emitter-base breakdown voltage
collector-emitter cut-off current
collector-base cut-off current
DC current gain
BFQ262
I_E = 0.1 mA; I_C = 0
I_B = 0; V_CE = 50 V
I_E = 0; V_CB = 50 V
I_C = 100 mA; V_CE = 10 V;
T_amb = 25 °C; see Fig.4
BFQ262A
transition frequency
BFQ262
BFQ262A
I_C = 100 mA; V_CE = 10 V;
f = 100 MHz; T_amb = 25 °C;
see Fig.6
collector-base capacitance
I_C = i_c = 0; V_CB = 10 V;
f = 1 MHz; T_amb = 25 °C;
see Fig.5
collector capacitance
I_E = i_e = 0; V_CB = 10 V;
f = 1 MHz
MIN. TYP. MAX. UNIT
100 −
−
V
115 −
−
V
65
−
−
V
95
−
−
V
95
−
110 −
3
−
−
−
−
−
−
V
−
V
−
V
100 µA
20
µA
50
60
−
20
35
−
1
1.4 −
0.8 1.2 −
−
2
−
GHz
GHz
pF
−
3.5 −
pF
1997 Oct 02
4