BFQ255 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP video transistors

Philips Semiconductors
PNP video transistors
Product specification
BFQ255; BFQ255A
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_(BR)CBO
V_(BR)CEO
V_(BR)CER
V_(BR)EBO
I_CES
I_CBO
h_FE
C_cb
f_T
collector-base breakdown voltage I_C = −0.1 mA; I_E = 0
BFQ255
−100 −
BFQ255A
−115 −
collector-emitter breakdown voltage I_C = −10 mA; I_B = 0
BFQ255
−66 −
BFQ255A
−95 −
collector-emitter breakdown voltage I_C = −10 mA; R_BE = 100 Ω
BFQ255
−95 −
BFQ255A
−110 −
emitter-base breakdown voltage
collector-emitter cut-off current
collector-base cut-off current
DC current gain
collector-base capacitance
I_E = −0.1 mA; I_C = 0
I_B = 0; V_CE = −50 V
I_E = 0; V_CB = −50 V
I_C = −50 mA; V_CE = −10 V;
T_amb = 25 °C; see Fig.4
I_C = 0; V_CB = −10 V; f = 1 MHz;
see Fig.5
−3 −
−
−
−
−
20 30
−
2
transition frequency
BFQ255
I_C = −50 mA; V_CE = −10 V;
f = 100 MHz; T_amb = 25 °C; see Fig.6 ₁
1.3
BFQ255A
0.8 1.2
−
V
−
V
−
V
−
V
−
V
−
V
−
V
−100 µA
−20 µA
−
−
pF
−
GHz
−
GHz
handbo^−o⁵k,⁰h⁰alfpage
IC
(mA)
−400
MEA333
−300
−200
−100
0
0
−20
−40
−60
−80
VCEO (V)
handbook, h⁴alfpage
Ptot
(W)
3
MBB888
2
1
0
0
50
100
150
200
Ts (^oC)
1997 Oct 02
Fig.2 DC SOAR.
Fig.3 Power derating curve.
4