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BFQ252 Datasheet, PDF (4/8 Pages) NXP Semiconductors – PNP video transistors | |||
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Philips Semiconductors
PNP video transistors
Product speciï¬cation
BFQ252; BFQ252A
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)CER
V(BR)EBO
ICES
ICBO
hFE
Ccb
fT
collector-base breakdown voltage IC = â0.1 mA; IE = 0
BFQ252
â100 â
BFQ252A
â115 â
collector-emitter breakdown voltage IC = â10 mA; IB = 0
BFQ252
â65 â
BFQ252A
â95 â
collector-emitter breakdown voltage IC = â10 mA; RBE = 100 â¦
BFQ252
â95 â
BFQ252A
â110 â
emitter-base breakdown voltage IE = â0.1 mA; IC = 0
â3 â
collector-emitter cut-off current
IB = 0; VCE = â50 V
â
â
collector-base cut-off current
IE = 0; VCB = â50 V
â
â
DC current gain
IC = â50 mA; VCE = â10 V;
Tamb = 25 °C; see Fig.4
20 30
collector-base capacitance
IC = ic = 0; VCB = â10 V; f = 1 MHz; â
2.5
Tamb = 25 °C; see Fig.5
transition frequency
BFQ252
IC = â50 mA; VCE = â10 V;
f = 100 MHz; Tamb = 25 °C; see Fig.6 1
1.3
BFQ252A
0.8 1.2
â
V
â
V
â
V
â
V
â
V
â
V
â
V
â100 µA
â20 µA
â
â
pF
â
GHz
â
GHz
handboâo4k,0h0alfpage
IC
(mA)
â300
MBB893
â200
â100
0
0
â20
â40
â60
â80
VCEO (V)
handbook, h4alfpage
Ptot
(W)
3
MBB895
2
1
0
0
50
100
150
200
Ts (oC)
1997 Oct 02
Fig.2 DC SOAR.
Fig.3 Power derating curve.
4
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