BFQ131 Datasheet, PDF (4/6 Pages) NXP Semiconductors – NPN video transistor

Philips Semiconductors
NPN video transistor
Product specification
BFQ131
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
up to T_s = 60 °C; note 1; P_tot = 1.9 W
Note
1. T_s = the temperature at the soldering point of the collector pin.
VALUE
60
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE
f_T
C_re
collector-base breakdown voltage I_C = 0.1 mA; I_E = 0
25
collector-emitter breakdown voltage I_C = 0.1 mA; I_B = 0
18
emitter-base breakdown voltage I_E = 0.1 mA; I_C = 0
2
collector-emitter cut-off current
V_CE = 18 V; V_BE = 0
−
DC current gain
I_C = 25 mA; V_CE = 10 V;
25
see Fig.3
transition frequency
I_C = 100 mA; V_CE = 10 V;
−
f = 500 MHz; see Fig.4
feedback capacitance
I_C = 0; V_CE = 10 V; f = 1 MHz; −
see Fig.5
TYP.
−
−
−
−
4
1.2
MAX.
−
−
−
1
−
UNIT
V
V
V
µA
−
GHz
−
pF
1995 Sep 26
4