BCV26_15 Datasheet, PDF (4/7 Pages) NXP Semiconductors – PNP Darlington transistors

NXP Semiconductors
PNP Darlington transistors
Product data sheet
BCV26; BCV46
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BEon
f_T
collector cut-off current
BCV26
BCV46
emitter cut-off current
DC current gain
BCV26
BCV46
DC current gain
BCV26
BCV46
DC current gain
BCV26
BCV46
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
CONDITIONS
MIN. TYP. MAX. UNIT
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −60 V
I_C = 0; V_EB = −10 V
I_C = −1 mA; V_CE = −5 V; (see Fig.2)
−
−
−
−
−
−
4000 −
2000 −
I_C = −10 mA; V_CE = −5 V; (see Fig.2)
10000 −
4000 −
I_C = −100 mA; V_CE = −5 V; (see Fig.2)
20000 −
10000 −
I_C = −100 mA; I_B = −0.1 mA
−
−
−100 nA
−100 nA
−100 nA
−
−
−
−
−
−
−1 V
I_C = −100 mA; I_B = −0.1 mA
−
I_C = −10 mA; V_CE = −5 V
−
I_C = −30 mA; V_CE = −5 V; f = 100 MHz −
−
−1.5 V
−
−1.4 V
220 −
MHz
100000
handbook, full pagewidth
hFE
80000
60000
40000
20000
0
−1
V_CE = −2 V.
2004 Jan 13
MGD836
−10
−10²
−10³
IC (mA)
Fig.2 DC current gain; typical values.
4