BCM847BV_15 Datasheet, PDF (4/15 Pages) NXP Semiconductors – NPN/NPN matched double transistors

NXP Semiconductors
BCM847BV/BS/DS
NPN/NPN matched double transistors
Table 7. Thermal characteristics …continued
Symbol Parameter
Conditions
Min
Typ
Max
Per device
R_th(j-a)
thermal resistance from in free air
junction to ambient
SOT666
[1][2] _-
-
416
SOT363
[1] _-
-
416
SOT457
[1] _-
-
328
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Unit
K/W
K/W
K/W
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Per transistor
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BE
C_c
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
collector capacitance
V_CB = 30 V;
I_E = 0 A
V_CB = 30 V;
I_E = 0 A;
T_j = 150 °C
V_EB = 5 V;
I_C = 0 A
V_CE = 5 V;
I_C = 10 µA
V_CE = 5 V;
I_C = 2 mA
I_C = 10 mA;
I_B = 0.5 mA
I_C = 100 mA;
I_B = 5 mA
I_C = 10 mA;
I_B = 0.5 mA
I_C = 100 mA;
I_B = 5 mA
V_CE = 5 V;
I_C = 2 mA
V_CE = 5 V;
I_C = 10 mA
V_CB = 10 V;
I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance V_EB = 0.5 V;
I_C = i_c = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
15
nA
-
-
5
µA
-
-
100 nA
-
250 -
200 290 450
-
50
200 mV
-
200 400 mV
[1] _-
760 -
mV
[1] _-
910 -
mV
[2] ₆₁₀
660
710
mV
[2] _-
-
770 mV
-
-
1.5
pF
-
11
-
pF
BCM847BV_BS_DS_6
Product data sheet
Rev. 06 — 28 August 2009
© NXP B.V. 2009. All rights reserved.
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