BC859_15 Datasheet, PDF (4/8 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859; BC860
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
h_FE
V_CEsat
V_BEsat
emitter cut-off current
DC current gain
BC859B; BC860B
BC859C; BC860C
collector-emitter saturation
voltage
base-emitter saturation voltage
V_BE
base-emitter voltage
C_c
collector capacitance
C_e
emitter capacitance
f_T
transition frequency
F
noise figure
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
CONDITIONS
MIN. TYP. MAX. UNIT
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −2 mA; V_CE = −5 V;
see Figs 2 and 3
−
−1 −15 nA
−
−
−4 μA
−
−
−100 nA
220 −
475
420 −
800
I_C = −10 mA; I_B = −0.5 mA
−
I_C = −100 mA; I_B = −5 mA
−
I_C = −10 mA; I_B = −0.5 mA; note 1
−
I_C = −100 mA; I_B = −5 mA; note 1
−
I_C = −2 mA; V_CE = −5 V; note 2
−600
I_C = −10 mA; V_CE = −5 V; note 2
−
I_E = I_e = 0; V_CB = −10 V; f = 1 MHz −
I_C = I_c = 0; V_EB = −500 mV; f = 1 MHz −
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 100
I_C = −200 μA; V_CE = −5 V; R_S = 2 kΩ;
f = 30 Hz to 15 kHz
−
−75
−250
−700
−850
−650
−
4.5
10
−
−
−300
−650
−
−
−750
−820
−
−
−
4
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
I_C = −200 μA; V_CE = −5 V; R_S = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
Notes
1. V_BEsat decreases by about −1.7 mV/K with increasing temperature.
2. V_BE decreases by about −2 mV/K with increasing temperature.
2004 Jan 16
4