BC847BVN Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN/PNP general purpose transistor

Philips Semiconductors
NPN/PNP general purpose transistor
Product specification
BC847BVN
600
handbook, halfpage
(1)
hFE
400
(2)
MLD703
200
(3)
0
10^−1
1
TR1 (NPN); V_CE = 5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
IC (mA)
Fig.2 DC current gain as a function of collector
current: typical values.
1200
handbook, halfpage
VBE
mV
1000
800
600
400
MLD704
(1)
(2)
(3)
20010_−2
10^−1
1
TR1 (NPN); V_CE = 5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10
10²
10³
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
10⁴
handbook, halfpage
VCEsat
(mV)
10³
MLD705
10²
(1)
(2)
(3)
1100_−1
1
TR1 (NPN); I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current: typical values.
1200
handbook, halfpage
VBEsat
(mV)
1000
800
600
MLD706
(1)
(2)
(3)
400
20010_−1
1
TR1 (NPN); I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
10
10²
10³
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current.
2001 Nov 07
4