BC109C Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN general purpose transistors

Philips Semiconductors
NPN general purpose transistors
Product specification
BC107; BC108; BC109
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
h_FE
V_CEsat
V_BEsat
V_BE
C_c
C_e
f_T
F
F
collector cut-off current
emitter cut-off current
DC current gain
BC107A; BC108A
I_E = 0; V_CB = 20 V
I_E = 0; V_CB = 20 V; T_j = 150 °C
I_C = 0; V_EB = 5 V
I_C = 10 µA; V_CE = 5 V
−
−
15 nA
−
−
15 µA
−
−
50 nA
−
90
−
BC107B; BC108B; BC109B
40 150 −
BC108C; BC109C
100 270 −
DC current gain
BC107A; BC108A
I_C = 2 mA; V_CE = 5 V
110 180 220
BC107B; BC108B; BC109B
200 290 450
BC108C; BC109C
420 520 800
collector-emitter saturation voltage I_C = 10 mA; I_B = 0.5 mA
−
90 250 mV
I_C = 100 mA; I_B = 5 mA
−
200 600 mV
base-emitter saturation voltage I_C = 10 mA; I_B = 0.5 mA; note 1
−
700 −
mV
I_C = 100 mA; I_B = 5 mA; note 1
−
900 −
mV
base-emitter voltage
I_C = 2 mA; V_CE = 5 V; note 2
550 620 700 mV
I_C = 10 mA; V_CE = 5 V; note 2
−
−
770 mV
collector capacitance
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
2.5 6
pF
emitter capacitance
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
9
−
pF
transition frequency
I_C = 10 mA; V_CB = 5 V; f = 100 MHz 100 −
−
MHz
noise figure
BC109B; BC109C
I_C = 200 µA; V_CE = 5 V; R_S = 2 kΩ;
f = 30 Hz to 15.7 kHz
−
−
4
dB
noise figure
I_C = 200 µA; V_CE = 5 V; R_S = 2 kΩ;
BC107A; BC108A
f = 1 kHz; B = 200 Hz
−
−
10 dB
BC107B; BC108B; BC108C
BC109B; BC109C
−
−
4
dB
Notes
1. V_BEsat decreases by about 1.7 mV/K with increasing temperature.
2. V_BE decreases by about 2 mV/K with increasing temperature.
1997 Sep 03
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