BAV99_15 Datasheet, PDF (4/14 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SWITCHING DIODE

NXP Semiconductors
BAV99 series
High-speed switching diodes
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BAV99
BAV99W
thermal resistance from
junction to solder point
BAV99
BAV99S
BAV99W
Conditions
in free air
Min Typ Max Unit
[1][2]
-
-
500 K/W
-
-
625 K/W
-
-
360 K/W
[3] _-
-
260 K/W
-
-
300 K/W
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering points at pins 2, 3, 5 and 6.
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_F
forward voltage
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 150 mA
I_R
reverse current
V_R = 25 V
V_R = 80 V
V_R = 25 V; T_j = 150 °C
V_R = 80 V; T_j = 150 °C
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
t_rr
reverse recovery time
V_FR
forward recovery voltage
Min Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[1] _-
-
[2] _-
-
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
[2] When switched from I_F = 10 mA; t_r = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
0.5 μA
30 μA
50 μA
1.5 pF
4
ns
1.75 V
BAV99_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 November 2010
© NXP B.V. 2010. All rights reserved.
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