BAS81 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Schottky barrier diodes

Philips Semiconductors
Schottky barrier diodes
GRAPHICAL DATA
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IF
(mA)
10
MGC690
(1) (2) (3)
1
(1) (2) (3)
10 ^−1
0
0.2
0.4
0.6
0.8
1.0
VF (V)
(1) T_amb = 85 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
2.0
Cd
(pF)
1.5
MGC688
1.0
0.5
0
0
15
30
45
60
VR (V)
Product specification
BAS81; BAS82; BAS83
hand_Ib_Roo¹k,⁰h⁴alfpage
(nA)
10 ³
10 ²
10
MGC689
(1)
(2)
1
(3)
10 ^−1
10 ^−2
0
20
40 _{VR (V)} 60
(1) T_amb = 85 °C.
(2) T_amb = 25 °C.
(3) T_amb = −40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
f = 1 MHz.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1998 Jun 24
4