BAS56 Datasheet, PDF (4/8 Pages) NXP Semiconductors – High-speed double diode

Philips Semiconductors
High-speed double diode
Product specification
BAS56
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
I_R
reverse current
C_d
diode capacitance
t_rr
reverse recovery time
V_fr
forward recovery voltage
CONDITIONS
see Fig.3; I_F = 200 mA; DC value;
note 1
see Fig.5
V_R = 60 V
V_R = 60 V; T_j = 150 °C
series connection
V_R = 120 V
V_R = 120 V; T_j = 150 °C
f = 1 MHz; V_R = 0; see Fig.6
when switched from I_F = 400 mA to
I_R = 400 mA; R_L = 100 Ω;
measured at I_R = 40 mA; see Fig.7
when switched from I_F = 400 mA;
t_r = 30 ns; see Fig.8
when switched from I_F = 400 mA;
t_r = 100 ns; see Fig.8
MIN.
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
1.0 V
100 nA
100 µA
100 nA
100 µA
2.5 pF
6 ns
2.0 V
1.5 V
Note
1. T_amb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
1996 Sep 10
4