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| BAS21VD Datasheet, PDF (4/8 Pages) NXP Semiconductors – High-voltage switching diode array | |||
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Philips Semiconductors
High-voltage switching diode array
Product speciï¬cation
BAS21VD
300
handbook, halfpage
IF
(mA)
200
MBG442
600
handbook, halfpage
IF
(mA)
400
MBG384
(1) (2)
(3)
100
200
0
0
100
Tamb (oC)
200
Device mounted on a FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0
0
1
VF (V)
2
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of a forward
voltage.
handbook1, 0ha2lfpage
IFSM
(A)
10
MLE165
handbook1, 0ha2lfpage
IR
(µA)
10
(1)
(2)
1
10 1
MBG381
1
1
10
102
103
104
105
tp (µA)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak
forward current as a function of pulse duration.
10 2
0
100
Tj (oC)
200
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
Fig.5 Reverse current as a function of junction
temperature.
2003 Jul 02
4
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