BAP65-05W Datasheet, PDF (4/8 Pages) NXP Semiconductors – Silicon PIN diode

Philips Semiconductors
Silicon PIN diode
GRAPHICAL DATA
10
handbook, halfpage
rD
(Ω)
1
MGW097
10^−1
10^−1
1
10 _{IF (mA)} 10²
f = 100 MHz; T_j = 25 °C.
Fig.2 Forward resistance as a function of the
forward current; typical values.
Product specification
BAP65-05W
1000
handbook, halfpage
Cd
(fF)
800
MGW098
600
400
200
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
handbook, halfpage
| s ₂₁| ²
(1)
(2)
(dB)
− 0.1
− 0.2
(3)
(4)
MGW099
− 0.3
− 0.4
− 0.5
0
(1) I_F = 100 mA.
(2) I_F = 10 mA.
1
2 _{f (GHz)} 3
(3) I_F = 5 mA.
(4) I_F = 1 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
T_amb = 25 °C.
Fig.4 Insertion loss (|s₂₁|²) of the diode in on-state
as a function of frequency; typical values.
handbook, h⁰alfpage
| s ₂₁| ²
(dB)
− 10
− 20
− 30
− 40
0
1
MGW100
2 _{f (GHz)} 3
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T_amb = 25 °C.
Fig.5 Isolation (|s₂₁|²) of the diode in off-state as a
function of frequency; typical values.
2001 May 07
4