BAP50-05_15 Datasheet, PDF (4/8 Pages) NXP Semiconductors – General purpose PIN diode

NXP Semiconductors
General purpose PIN diode
GRAPHICAL DATA
10³
handbook, halfpage
rD
(Ω)
10²
MGS317
10³
handbook, halfpage
Cd
(fF)
Product specification
BAP50-05
MGS318
10
1
10 ^{− 2}
10 ^{− 1}
1 _{IF (mA)} 10
f = 100 MHz; T_j = 25 C.
Fig.2 Forward resistance as a function of the
forward current; typical values.
10²
10 ^{− 1}
1
10 _{VR (V)} 10²
f = 1 MHz; T_j = 25 C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
handbook, halfpage
|S21| ²
( dB )
−1
−2
MGS319
(1)
(2)
(3)
−3
−4
−5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) I_F = 10 mA.
(2) I_F = 1 mA.
(3) I_F = 0.5 mA.
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T_amb = 25 C.
Fig.4 Insertion loss (S₂₁²) of the diode in on-state
as a function of frequency; typical values.
0
handbook, halfpage
|S21| ²
( dB )
−5
MGS321
− 10
− 15
− 20
− 25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50  stripline circuit.
T_amb = 25 C.
Fig.5 Isolation (S₂₁²) of the diode in off-state as a
function of frequency; typical values.
1999 May 10
4