BAP1321-01 Datasheet, PDF (4/7 Pages) NXP Semiconductors – Silicon PIN diode

Philips Semiconductors
Silicon PIN diode
GRAPHICAL DATA
Preliminary specification
BAP1321-01
10
r_D
(Ω)
1
0.1
0.1
1
f = 100 MHz; T_j = 25 °C.
10
100
I_F (mA)
Fig.2 Forward resistance as a function of forward
current; typical values.
400
C_d
(pF)
300
200
100
0
0
4
8
f = 1 MHz; T_j = 25 °C.
12
16
20
V_R (V)
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
|s₂₁|²
(dB)
-0.1
(3)
(4)
-0.2
-0.3
(1)
(2)
-0.4
-0.5
0
(1) I_F = 0.5 mA.
(2) I_F = 1 mA.
1
2
3
(3) I_F = 10 mA.
f (GHz)
(4) I_F = 100 mA.
Diode inserted in series with a 50 Ω stripline circuit and biased
via the analyzer Tee network. T_amb = 25 °C.
Fig.4 Insertion loss (|s₂₁|²) of the diode as a
function of frequency; typical values.
2001 Nov 01
0
|s₂₁|²
(dB)
-10
-20
-30
-40
0
1
2
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T_amb = 25 °C.
Fig.5 Isolation (|s₂₁|²) of the diode as a function of
frequency; typical values.
4